云南高校图书馆联盟文献共享服务平台- INGAAS/INALAS

INGAAS/INALAS: 作品数：43被引量：37H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：孙小菡肖金标张明德张永照刘峰奇更多>>; 相关机构：中国科学院东南大学清华大学华中科技大学更多>>; 相关期刊：《半导体杂志》《光学学报》《科学通报》《微纳电子技术》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划舟山市科技计划项目更多>>

界面停顿对生长量子级联激光器InGaAs/InAlAs超晶格晶体质量的影响: 《微纳电子技术》2025年第5期63-68,共6页王祎玮房玉龙张曦商耀辉赵辉师巨亮; 河北省自然科学基金(F2023516003)。; 量子级联激光器(QCL)界面质量对材料质量和器件性能的影响很大,通过分子束外延(MBE)设备生长了高微分增益结构的QCL。研究了界面停顿对InGaAs/InAlAs超晶格质量的影响。改变超晶格层与层之间的中断时间(10、15、25、35、40s)后,发现界...; 关键词：超晶格应变补偿量子级联激光器(QCL) 外延界面停顿

Correlation between the whole small recess offset and electrical performance of InP-based HEMTs: 《红外与毫米波学报》2025年第1期40-45,共6页GONG Hang ZHOU Fu-Gui FENG Rui-Ze FENG Zhi-Yu LIU Tong SHI Jing-Yuan SU Yong-Bo JIN Zhi; Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).; In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...; 关键词：InP high-electron-mobility transistor(InP HEMT) INGAAS/INALAS DC/RF characteristic smallsignal modeling double-recessed gate process

电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT: 《红外与毫米波学报》2024年第3期329-333,共5页封瑞泽曹书睿冯识谕周福贵刘同苏永波金智; The National Natural Science Foundation of China(61434006)。; 本文设计并制作了fT>400 GHz的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As铟磷高电子迁移率晶体管(InP HEMT)。采用窄栅槽技术优化了寄生电阻。器件栅长为54.4 nm,栅宽为2×50μm。最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为126...; 关键词：铟磷高电子迁移率晶体管(InP HEMTs) INGAAS/INALAS 电流增益截止频率(f_(T)) 最大振荡频率(f_(max)) 栅槽

Pushing the boundaries:an interview with Dae-Hyun Kim on terahertz devices: 《National Science Review》2024年第3期36-39,共4页Defu Wang; Ⅲ-Ⅴcompound semiconductors,such as InGaAs/InAlAs,exhibit exceptional carrier transport properties,establishing them as fundamen-tal elements in terahertz(THz)applications crucial for the development of 6G networks.T...; 关键词：INGAAS/INALAS HETEROJUNCTION BIPOLAR

InGaAs/InAlAs光电导太赫兹发射天线的制备与表征: 《太赫兹科学与电子信息学报》2023年第12期1403-1409,1416,共8页陈益航杨延召张桂铭徐建星苏向斌王天放余红光石建美吴斌杨成奥张宇徐应强倪海桥牛智川; 国家自然科学基金资助项目(62127804)。; 光电导天线作为太赫兹时域光谱仪产生与探测太赫兹辐射的关键部件,具有重要的科研与工业价值。本文采用分子束外延(MBE)方法制备InGaAs/InAlAs超晶格作为1550 nm光电导天线的光吸收材料,使用原子力显微镜、光致发光、高分辨X射线衍射等...; 关键词：太赫兹时域光谱仪光电导天线分子束外延 InGaAs/InAlAs超晶格

Influence of Frohlich Interaction on Intersubband Transitions of InGaAs/InAlAs-Based Quantum Cascade Detector Structures Investigated by Infrared Modulated Photoluminescence: 《Chinese Physics Letters》2023年第7期86-92,共7页朱亮清刘舒曼邵军陈熙仁刘峰奇胡志高褚君浩; supported by the National Key Research and Development Program of China(Grant No.2019YFB2203400);the National Natural Science Foundation of China(Grant Nos.61974044 and 11974368);the Shanghai Committee of Science and Technology of China(Grant Nos.20142201000 and 21ZR1421500)。; We demonstrate the use of an infrared modulated photoluminescence(PL)method based on a step-scan Fourier-transform infrared spectrometer to analyze intersubband transition(ISBT)of InGaAs/InAlAs quantum cascade detecto...; 关键词：TRANSITIONS Frohlich Transition

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs: 《Chinese Physics B》2022年第5期720-724,共5页Shurui Cao Ruize Feng Bo Wang Tong Liu Peng Ding Zhi Jin; Project supported by the National Nature Science Foundation of China(Grant No.61434006)。; A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gat...; 关键词：InP HEMT INGAAS/INALAS cut-off frequency(fT) maximum oscillation frequency(fmax) asymmetric gate recess

InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range被引量：4: 《Chinese Optics Letters》2022年第2期153-159,共7页Yu Li Weifang Yuan Ke Li Xiaofeng Duan Kai Liu Yongqing Huang; This work was supported by the National Key Research and Development Program of China(No.2018YFB2200803)。; Linearity is a very important parameter to measure the performance of avalanche photodiodes(APDs) under high input optical power. In this paper, the influence of the absorption layer on the linearity of APDs is carefu...; 关键词：LINEARITY avalanche photodiode dynamic range

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs被引量：3: 《Chinese Physics B》2022年第1期675-679,共5页Ruize Feng Bo Wang Shurui Cao Tong Liu Yongbo Su Wuchang Ding Peng Ding Zhi Jin; the National Natural Science Foundation of China(Grant No.61434006).; We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8...; 关键词：InP HEMT INGAAS/INALAS current gain cut-off frequency(fT) maximum oscillation frequency(f_(max)) gate-recess length(L_(recess))

InAlAs/InGaAs/InAlAs量子阱质子辐照损伤机理被引量：2: 《西安电子科技大学学报》2017年第4期151-155,161,共6页王海丽吉慧芳孙树祥丁芃金智魏志超钟英辉李玉晓; 国家自然科学基金资助项目(61404115,61434006,11475256); 对InP基高电子迁移率场效晶体管关键的InAlAs/InGaAs/InAlAs量子阱结构质子辐照损伤机理进行了研究.基于SRIM软件计算了50keV、75keV和200keV质子在量子阱中的投影射程和诱生空位缺陷信息.随着质子能量增加,质子注入深度逐渐增加并最终...; 关键词：高电子迁移率晶体管质子辐照空位缺陷非电离能量损失

INGAAS/INALAS