Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs  

作　　者：Shurui Cao Ruize Feng Bo Wang Tong Liu Peng Ding Zhi Jin 曹书睿;封瑞泽;王博;刘桐;丁芃;金智(High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100029,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China)

机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100029,China [3]Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China

出　　处：《Chinese Physics B》2022年第5期720-724,共5页中国物理B（英文版）

基　　金：Project supported by the National Nature Science Foundation of China(Grant No.61434006)。

摘　　要：A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography.DC and RF measurement was conducted.With the gate offset varying from drain side to source side,the maximum drain current(I_(ds,max))and transconductance(g_(m,max))increased.In the meantime,fTdecreased while f;increased,and the highest fmax of 1096 GHz was obtained.It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance.Output conductance was also suppressed by gate offset toward source side.This provides simple and flexible device parameter selection for HEMTs of different usages.

关 键 词：InP HEMT INGAAS/INALAS cut-off frequency(fT) maximum oscillation frequency(fmax) asymmetric gate recess 

分 类 号：TN386[电子电信—物理电子学]