Correlation between the whole small recess offset and electrical performance of InP-based HEMTs  

InP基HEMT的整体小凹槽偏移与电学性能的相关性

作　　者：GONG Hang ZHOU Fu-Gui FENG Rui-Ze FENG Zhi-Yu LIU Tong SHI Jing-Yuan SU Yong-Bo JIN Zhi 龚航;周福贵;封瑞泽;冯识谕;刘桐;史敬元;苏永波;金智(中国科学院微电子研究所高频高压器件与集成电路研究中心,北京100029;中国科学院大学,北京100049)

机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences(UCAS),Beijing 100049,China

出　　处：《红外与毫米波学报》2025年第1期40-45,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).

摘　　要：In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.在这项工作中,我们研究了整个小凹槽偏移对InP高电子迁移率晶体管(HEMT)的直流和射频特性的影响。L_(g)=80 nm HEMT采用双凹栅极工艺制造。我们重点关注它们的直流和射频响应,包括最大跨导(g_(m,max))、导通电阻(R_(ON))、电流增益截止频率(f_(T))和最大振荡频率(f_(max))。这些设备具有几乎相同的RON。随着整个小凹槽向源移动,g_(m,max)会提高。然而,尽管整个小栅极凹槽向漏极移动会导致较小g_(m,max),但较小的栅源电容(C_(gs))和较小的漏极输出电导(g_(ds))会导致最大的f_(T)。根据小信号建模,整个小凹槽朝向漏极的器件表现出优异的射频特性,例如f_(T)=372 GHz和f_(max)=394 GHz。这一结果是通过注意调整电阻和电容寄生效应来实现的,这些寄生效应在高频响应中起着关键作用。

关 键 词：InP high-electron-mobility transistor(InP HEMT) INGAAS/INALAS DC/RF characteristic smallsignal modeling double-recessed gate process 

分 类 号：TN385[电子电信—物理电子学]