Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs  

作　　者：Ruize Feng Bo Wang Shurui Cao Tong Liu Yongbo Su Wuchang Ding Peng Ding Zhi Jin 封瑞泽;王博;曹书睿;刘桐;苏永波;丁武昌;丁芃;金智(High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100029,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China)

机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100029,China [3]Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China

出　　处：《Chinese Physics B》2022年第1期675-679,共5页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.61434006).

摘　　要：We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_(X) passivation treatment.The maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µm.At this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 V.Meanwhile,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically increases.When L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.

关 键 词：InP HEMT INGAAS/INALAS current gain cut-off frequency(fT) maximum oscillation frequency(f_(max)) gate-recess length(L_(recess)) 

分 类 号：TN386[电子电信—物理电子学]