InAlAs/InGaAs/InAlAs量子阱质子辐照损伤机理  

Proton irradiation damage mechanism of the InAlAs/InGaAs/InAlAs quantum well

作　　者：王海丽[1] 吉慧芳[1] 孙树祥 丁芃[2] 金智[2] 魏志超[3] 钟英辉[1] 李玉晓[1] 

机构地区：[1]郑州大学物理工程学院,河南郑州450001 [2]中国科学院微电子研究所,北京100029 [3]中国空间技术研究院,北京100086

出　　处：《西安电子科技大学学报》2017年第4期151-155,161,共6页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61404115,61434006,11475256)

摘　　要：对InP基高电子迁移率场效晶体管关键的InAlAs/InGaAs/InAlAs量子阱结构质子辐照损伤机理进行了研究.基于SRIM软件计算了50keV、75keV和200keV质子在量子阱中的投影射程和诱生空位缺陷信息.随着质子能量增加,质子注入深度逐渐增加并最终逃逸出材料层.另外,在异质结附近诱生的空位缺陷个数先增加后减小,且As空位为主要的诱生缺陷.基于解析模型计算了不同能量质子入射下In_(0.52)Al_(0.48)As和In_(0.53)Ga_(0.47)As材料的非电离能量损失.随着质子能量增加,非电离能量损失先增加后减小,与辐照诱生缺陷密度随能量的变化趋势一致.最后通过辐照陷阱模型验证了诱生缺陷作为受主补偿中心对量子阱二维电子气的俘获作用,确定了非电离能量损失诱生空位缺陷为质子辐照主要的损伤机制.InP-based high electron mobility transistors （HEMT） have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InA1As/InGaAs/InA1As quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50 keV, 75 keV and 200 keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss （NIEL） of In0.52 Al0.48 As and In0. 53 Ga0.47 As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.

关 键 词：高电子迁移率晶体管 质子辐照 空位缺陷 非电离能量损失 

分 类 号：TN304.2[电子电信—物理电子学]