电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT  

InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz

作　　者：封瑞泽 曹书睿 冯识谕 周福贵 刘同 苏永波[1,2] 金智 FENG Rui-Ze;CAO Shu-Rui;FENG Zhi-Yu;ZHOU Fu-Gui;LIU Tong;SU Yong-Bo;JIN Zhi(High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,高频高压器件与集成电路研究中心,北京100029 [2]中国科学院大学集成电路学院,北京100049

出　　处：《红外与毫米波学报》2024年第3期329-333,共5页Journal of Infrared and Millimeter Waves

基　　金：The National Natural Science Foundation of China(61434006)。

摘　　要：本文设计并制作了fT>400 GHz的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As铟磷高电子迁移率晶体管(InP HEMT)。采用窄栅槽技术优化了寄生电阻。器件栅长为54.4 nm,栅宽为2×50μm。最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为1265 mS/mm。即使在相对较小的VDS=0.7 V下,电流增益截止频率fT达到了441 GHz,最大振荡频率fmax达到了299 GHz。该器件可应用于太赫兹单片集成放大器和其他电路中。In this letter,an In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based HEMT with fT>400 GHz was designed and fabri⁃cated successfully.A narrow gate recess technology was used to optimize the parasitic resistances.The gate length is 54.4 nm,and the gate width is 2×50μm.The maximum drain current IDS.max is 957 mA/mm,and the maximum transconductance gm.max is 1265 mS/mm.The current gain cutoff frequency fT is as high as 441 GHz and the maximum oscillation frequency fmax reaches 299 GHz,even at a relatively small value of VDS=0.7 V.The re⁃ported device can be applied to terahertz monolithic integrated amplifiers and other circuits.

关 键 词：铟磷高电子迁移率晶体管(InP HEMTs) INGAAS/INALAS 电流增益截止频率(f_(T)) 最大振荡频率(f_(max)) 栅槽 

分 类 号：TN385[电子电信—物理电子学]