Pushing the boundaries:an interview with Dae-Hyun Kim on terahertz devices  

作　　者：Defu Wang 

机构地区：[1]the Center for Carbon-based Electronics,School of Electronics,Peking University

出　　处：《National Science Review》2024年第3期36-39,共4页国家科学评论（英文版）

摘　　要：Ⅲ-Ⅴcompound semiconductors,such as InGaAs/InAlAs,exhibit exceptional carrier transport properties,establishing them as fundamen-tal elements in terahertz(THz)applications crucial for the development of 6G networks.These materials present the potential for high-performance,energy-efficient THz devices.Furthermore,their compatibility with heterojunction integration,particularly in hetero-integration with silicon-germanium(SiGe)bipolar complementary metal-oxide-semiconductor(BiCMOS),paves the way for cutting-edge THz devices.

关 键 词：INGAAS/INALAS HETEROJUNCTION BIPOLAR 

分 类 号：TB30[一般工业技术—材料科学与工程]