Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate  

作　　者：Xiao WANG Zhi-Yu LIN Yuan-Hang SUN Long YUE Yu-Min ZHANG Jian-Feng WANG Ke XU 

机构地区：[1]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]Suzhou Nanowin Science and Technology Co.,Ltd.,Suzhou 215123,China [4]Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China [5]Information Materials Research Department,Suzhou laboratory,Suzhou 215128,China

出　　处：《Science China(Information Sciences)》2024年第6期457-458,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key R&D Program of China(Grant Nos.2022YFB3605402,2022YFB3604301,2022YFB3605200);National Natural Science Foundation of China(Grant No.12274360)。

摘　　要：In the process of homoepitaxy AlGaN/GaN heterojunction by metal-organic chemical vapor deposition(MOCVD)on free-standing substrates,Si impurities from the air and reaction chamber accumulate at the regrowth interface[1],forming a leakage path in the AlGaN/GaN high electron mobility transistor(HEMT)[2].

关 键 词：ALGAN/GAN HEMTS MOCVD 

分 类 号：TN386[电子电信—物理电子学]