短沟道效应出现时InAlN/GaN HEMTs的内部电子分布  

Electron Distribution inside InAlN/GaN HEMTs When Short-channel Effects Emerge

作　　者：韩铁成 彭晓灿 Han Tiecheng;Peng Xiaocan(School of Electronics and Control Engineering,North China Institute of Aerospace Engineering,HebeiLangfang 065000;School of Remote Sensing and Information Engineering,North China Institute of Aerospace Engineering,HebeiLangfang 065000)

机构地区：[1]北华航天工业学院电子与控制工程学院,河北廊坊065000 [2]北华航天工业学院遥感信息工程学院,河北廊坊065000

出　　处：《科技风》2025年第11期43-46,共4页

基　　金：北华航天工业学院博士基金(BKY-2021-16)。

摘　　要：凭借二维器件仿真,从器件内部电子分布角度,直观且系统地展示了InAlN/GaN高电子迁移率晶体管直流特性上短沟道效应的发生。结果显示栅长(L_(G))缩短会减小栅极对栅下的电导率调控范围,同时由V_(DS)产生的源漏电场(E_(DS))一定程度上会削弱栅控能力;当横纵比(L_(G)/d,d是栅极到沟道的距离)不足时,在栅下调控较弱的位置(在缓冲层深处),E_(DS)导致连通源、漏极的泄漏电流通路的形成;缩短L_(G)或增大V_(DS)都会增加该泄漏通路的导电性。该泄漏通路的导电性越强,器件短沟道效应越严重。With two-dimensional device simulation,the occurrence of short-channel effects(SCEs)on the direct-current characteristics of InAlN/GaN high electron mobility transistors is demonstrated intuitively and systematically from the viewpoint of electron distribution inside the devices.The results show that the shortening of the gate-length(L_(G))decreases the range of the conductivity regulation under the gate;The source-drain electric field(E_(DS))generated by the V_(DS)to a certain extent weakens the ability of gate control;When the aspect ratio(L_(G)/d,d is the distance from the gate to channel)is insufficient,the E DS leads to the formation of a leakage current channel connecting the source and the drain in a weakly regulated location under the gate(deep in the buffer);Either shortening the L_(G)or increasing the V_(DS)increases the conductivity of this leakage current channel.The more conductive this leakage path is,the more severe the SCEs of the device.

关 键 词：InAlN/GaN 高电子迁移率晶体管(HEMTs) 短沟道效应 直流特性 仿真 

分 类 号：TN386[电子电信—物理电子学]