Effect of the Si-doped In_(0.49)Ga_(0.51)P barrier layer on the device performance of In_(0.4)Ga_(0.6)As MOSFETs grown on semi-insulating GaAs substrates  

作　　者：常虎东 孙兵 薛百清 刘桂明 赵威 王盛凯 刘洪刚 

机构地区：[1]Microwave Device and IC Department, Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第7期463-466,共4页中国物理B（英文版）

基　　金：the National Basic Research Program of China(Grant Nos.2011CBA00605 and 2010CB327501);the National Natural Science Foundation of China(Grant No.61106095);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-003)

摘　　要：In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs （gate length 2 μm） with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/（V·s）.In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs （gate length 2 μm） with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/（V·s）.

关 键 词：metal–oxide–semiconductor field-effect transistor INGAAS INGAP Al2O3 

分 类 号：TN386[电子电信—物理电子学]