Synthesis and Characterization of GaN Nanorods by Ammoniating Ga_2O_3 /Co Films Deposited on Si(111) Substrates  

氨化Si基Ga_2O_3/Co薄膜合成GaN纳米线及其表征(英文)

作　　者：秦丽霞[1] 薛成山[1] 庄惠照[1] 杨兆柱[1] 陈金华[1] 李红[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《Journal of Semiconductors》2008年第2期210-213,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:90201025,90301002)~~

摘　　要：GaN nanorods are successfully synthesized on Si（111） substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy,and Fourier-transform infrared spectroscopy are used to characterize the samples. The results demonstrate that the nanorods are single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanorods is also discussed.采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒.应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.观察发现纳米棒表面光滑.并讨论了GaN纳米棒的生长机制.

关 键 词：NANORODS crystal growth scanning and transmission electron microscopy 

分 类 号：TN304[电子电信—物理电子学]