Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC  

钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光(英文)

作　　者：王超[1] 张义门[1] 张玉明[1] 王悦湖[1] 徐大庆[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2008年第2期240-243,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60376001);国家重点基础研究发展规划(批准号:2002CB311904);国防基础研究规划(批准号:51327020202);教育部重点计划(批准号:106150)资助项目~~

摘　　要：Deep level transient Fourier spectroscopy （DLTFS） measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation. Two acceptor levels of vanadium at Ec - 0.81 and Ec - 1.02eV with the electron capture cross section of 7.0 × 10^16 and 6.0 × 10^-16 cm^2 are observed, respectively. Low-temperature photoluminescence measurements in the range of 1.4-3.4eV are also performed on the sample, which reveals the formation of two electron traps at 0.80 and 1. 16eV below the conduction band. These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC,with the location of 0.8±0.01 and 1. 1 ±0.08eV below the conduction band.借助深能级瞬态傅里叶谱研究了钒离子注入在SiC中引入的深能级陷阱.掺入的钒在4 H-SiC中形成两个深受主能级,分别位于导带下0.81和1.02eV处,其电子俘获截面分别为7.0×10-16和6.0×10-16cm2.对钒离子注入4 H-SiC样品进行低温光致发光测量,同样发现两个电子陷阱,分别位于导带下0.80和1.16eV处。结果表明,在n型4 H-SiC掺入杂质钒可以同时形成两个深的钒受主能级,分别位于导带下0.8±0.01和1.1±0.08eV处.

关 键 词：4H-SIC vanadium doping acceptor level 

分 类 号：TN386[电子电信—物理电子学]