量子限制效应对限制在多量子阱中受主束缚能的影响  

Effect of Quantum Confinement on Acceptor Binding Energy in Multiple Quantum Wells

作　　者：郑卫民[1] 宋淑梅[1] 吕英波[1] 王爱芳[1] 陶琳[1] 

机构地区：[1]山东大学威海分校应用物理系,威海264209

出　　处：《Journal of Semiconductors》2008年第2期310-314,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60776044);山东省自然科学基金(批准号:2006ZA10001)资助项目~~

摘　　要：从实验和理论上,研究了量子限制效应对限制在GaAs/AlAs多量子阱中受主对重空穴束缚能的影响.实验中所用的样品是通过分子束外延技术生长的一系列GaAs/AlAs多量子阱,量子阱宽度从3nm到20nm,并且在量子阱中央进行了浅受主铍(Be)原子的δ掺杂.在4,20,40,80和120K不同温度下,分别对上述系列样品进行了光致发光谱(PL)的测量,清楚地观察到了受主束缚激子从1s3/2(Γ6)基态到同种宇称2s3/2(Γ6)激发态的两空穴跃迁,并且从实验上测得了在不同量子阱宽度下受主的束缚能.理论上应用量子力学中的变分原理,数值计算了受主对重空穴束缚能随量子阱宽度的变化关系,比较发现理论计算和实验结果符合较好.We experimentally and theoretically investigate the effect of quantum confinement on the acceptor binding energy in multiple quantum wells.A series of Be delta-doped GaAs/AlAs multiple quantum wells with the doping at the well center are grown by molecular beam epitaxy. The quantum width ranges from 3 to 20nm. The photoluminescence spectra are measured at 4,20,40,80, and 120K, respectively. The two-hole transitions of the acceptor-bound exciton from the ground state, 1s3/2 （Γ6）, to the even-parity excited state,2s3/2 （Γ6） , are clearly observed and the acceptor binding energy is measured. A variational calculation is presented to obtain the acceptor binding energy as a function of well width. The experimental results agree well with the theory.

关 键 词：量子限制效应 浅受主杂质 Δ掺杂 GaAs/AlAs多量子阱 光致发光谱 

分 类 号：TN201[电子电信—物理电子学]