Al/SiC_P电子封装材料嵌入金属元件的组织与性能研究  

Study on Microstructure and Properties of Al/SiC_P Electronic Packaging Materials Embedded Metal Components

作　　者：张志庆[1] 于家康[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《热加工工艺》2008年第2期1-4,8,共5页Hot Working Technology

基　　金：国家自然科学基金资助项目(69976022)

摘　　要：采用气压浸渗技术完成了Al/SiCP电子封装材料嵌入金属元件的制备,应用能谱分析、XRD观察了界面层微观组织,并对界面连接强度进行了抗弯强度性能测试。结果表明,在制备Al/SiCP电子封装材料的同时,可以实现复合材料与固态金属(FeNi50、Ti)的可靠连接。Al/SiCP/FeNi50界面层生成Al3Ni、FeAl3、AlNi金属间化合物,厚度约40μm。预制型预热温度低于730℃时,Al/SiCP/Ti界面没有Al/Ti金属间化合物生成,界面抗弯强度可达Al/SiCP的59%～80%。Al / SiCp electronic packaging materials embedded metal components were fabricated by gas pressure infiltration. The microstructure of interracial film was observed by EDS and XRD, the joint strength was tested. The results show that, during the fabrication process of Al / SiCp electronic packaging materials, the reliable joint between composite and solid metal （FeNi50,Ti） can be realized. IntermetaUic compound, including Al3Ni, FeAl3 and AINi, are found in the Al/SiCp/FeNi50 interface, and the thickness is about 40μm. Intermetallic compound does not generate in Al/SiCp/Ti interface, and interface bend strength is up to 59%-80% of that of Al/SiCp when preform preheating temperature is below 730℃.

关 键 词：AL/SICP 气压浸渗 界面层 抗弯强度 

分 类 号：TB33[一般工业技术—材料科学与工程]