ZnS薄膜的电沉积及表征  

Electrodeposition and characterization of ZnS thin films

作　　者：翁晴[1] 程树英[1] 

机构地区：[1]福州大学食品安全分析与检测教育部重点实验室化学化工学院,福建福州350002

出　　处：《福州大学学报（自然科学版）》2008年第1期73-76,共4页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省自然科学基金资助项目(2006J0032);科技三项项目(2006F5062)

摘　　要：利用恒电位电沉积技术实现在ITO导电玻璃上沉积ZnS薄膜，用X射线粉末衍射、扫描电镜、原子力显微镜和X射线光电子能谱对制得的薄膜进行了研究．实验表明，用该方法制得的薄膜样品的主要成分是α-ZnS，薄膜表面均匀、致密和平整，平均粗糙度为3．112nm，颗粒的粒径大约为50—100nm．该薄膜中Zn原子和S原子化合价分别为＋2价和-2价，原子个数比接近于1：1，没有探测到单质元素（Zn或S）沉积．The ZnS films were deposited on ITO by using constant - potential electro - deposition, and were studied by using X- ray diffraction（XRD） , scan electron microscope （SEM） , atomic force microscope （AFM） and X- ray photoelectron spectroscopy （XPS） techniques. It is proved that the dominating composition of the thin films is the compound of α- ZnS, the ZnS films are uniform, dense and smooth; the average roughness is 3.112 nm, the diameter of granule is about 50 - 100 nm. In the ZnS films, Zn is in the oxidation state ＋ 2, and S is in the reduction state - 2. The atomic ratio of Zn/S is nearly 1 ： 1, and the deposition of single element Zn or S has not been detected in the ZnS films.

关 键 词：ZNS薄膜 电沉积 XRD SEM AFM XPS 

分 类 号：O484[理学—固体物理]