基于AlAs/InGaAs/GaAs共振隧穿效应的纳机电声传感器研制  

An NEMS acoustic sensor based on the resonant tunnelling effect of AlAs/InGaAs/GaAs

作　　者：仝召民[1] 薛晨阳[1] 张斌珍[1] 刘俊[1] 乔慧[1] 郭慧芳[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《功能材料与器件学报》2008年第1期23-27,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.50405025No.50535030)

摘　　要：本工作设计了一种基于AlAs/InGaAs/GaAs量子隧穿效应的纳机电拍子式声传感器,并采用ANSYS有限元分析软件对敏感元件的布置位置进行了最优化仿真设计。在加工工艺上,采用双空气桥技术和Au/Ge/Ni合金膜系欧姆接触技术有效降低了电容、电阻等对器件结构性能的影响;在传感器的具体加工过程中,共振隧穿结构(RTS)和拍子结构是通过控制孔技术一次流片完成的。对所加工的传感器进行了初步测试,结果表明,传感器频响能较好的与仿真结果相吻合,1.3KHz时同时具有较好的线性特性。This paper designed an NEMS acoustic sensor based on the quantum tunnelling effect of AlAs/ InGaAs/GaAs, and it was simulated by ANSYS for the location of the sensitive unit. With the fabrication technology, double air bridges and Au/Ge/Ni alloyed system had been introduced to deduce the effect of capacitance and resistor respectively; on the detailed process, the resonant tunnelling structure （RTS） and the cantilever structure are fabricated on the same wafer by control - hole technology. Elementary measurement had been conducted, which shown the sensor＇s frequency response was consistent well with simulation, and it had good linearity characteristic at 1.3 KHz.

关 键 词：AlAs/InGaAs/GaAs 拍子 声传感器 共振隧穿结构 

分 类 号：TN641.1[电子电信—电路与系统]