半导体硅熔体电导率的间接测量  

Indirect Measurement of Conductivity of Silicon Melt

作　　者：徐岳生[1] 刘彩池[1] 王海云[1] 张雯[1] 石义情[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《人工晶体学报》2008年第1期102-103,101,共3页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.50372016);教育部科学研究重点项目(No.205017)

摘　　要：本文通过在磁场下测定硅熔体的粘度,根据ηeff=（μBb）2σ关系式,间接计算出硅熔体的电导率。其结果与用其他方法测试的数值吻合。用电子导电、离子导电的变化,解释了硅熔体在1420～1690℃范围电导率的变化,研究结果对指导大直径硅单晶生长具有实际意义。The conductivity was calculated by measuring the viscosity of silicon melt in the magnet field and according to the relationship of ηelf = （μBb）2σ. The results were consistent with the value reported by other method. The variety of silicon melt conductivity at the range of 1420℃ to 1690℃ was explained with the variety of electrons and ions. This work is significant to the growth of large diameter silicon.

关 键 词：环境相 磁粘度 熔硅电导率 

分 类 号：TN304[电子电信—物理电子学]