过渡金属掺杂ZnO稀磁半导体铁磁特性研究进展  

Recent Progress in Developing Ferromagnetic Properties of Transition-metal-doped ZnO Diluted Magnetic Semiconductors

作　　者：王爱华[1] 张丽伟[1] 张兵临[1] 姚宁[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2008年第1期114-123,共10页Journal of Synthetic Crystals

基　　金：教育部重点项目(No.205091)

摘　　要：ZnO基稀磁半导体是目前研究的热门课题,关于3d过渡金属掺杂(transition-m etal-doped)ZnO的室温铁磁性有很多报道。本文对不同方法和不同条件制备的过渡金属掺杂的ZnO基稀磁半导体的磁性和相应机理进行了综述。ZnO-based diluted magnetic semiconductors （DMS） have become a focus research problem which attracts considerable attention. Recently, there have been many reports about the room-temperature ferromagnetism of 3d transition-metal-doped ZnO. In this paper, the magnetic properties and possible mechanism of ZnO-based DMS prepared by different methods are summarized and reviewed.

关 键 词：自旋电子学 稀磁半导体 ZNO 过渡金属掺杂 室温铁磁性 

分 类 号：TN304[电子电信—物理电子学]