自然掺杂p型ZnO薄膜的螺旋波等离子体辅助溅射沉积  

Intrinsic p-type ZnO Films by Helicon-wave-plasma Assisted Sputtering Deposition

作　　者：于威[1] 张锦川[1] 许贺菊[1] 张丽[1] 杨丽华[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2008年第1期151-155,共5页Journal of Synthetic Crystals

基　　金：河北省自然科学基金(No.E2006001006)

摘　　要：本工作通过调整工作气压,采用螺旋波等离子体辅助射频磁控溅射技术在A l2O3衬底上成功的制备了自然掺杂的p型ZnO薄膜。Hall测量显示在Ar/O2等离子体辅助下,随气压增加所沉积薄膜表现出从n型到p型再到n型的转变。p型ZnO薄膜载流子浓度为1.30×1016cm-3,电阻率为99.68Ω.cm,霍尔迁移率为4 cm2.V-1.s-1。X射线衍射和原子力显微镜的分析结果显示ZnO薄膜的导电类型和薄膜的生长特征相关,等离子体中活性粒子载能的减小导致薄膜表面成核几率增加和ZnO晶粒逐渐减小。较高氧活性粒子浓度有利于自然掺杂p型ZnO薄膜生长,而活性氧粒子种类的变化使薄膜生长质量变差,施主缺陷增加,薄膜转化为n型导电。The growth of nominal undoped p-type ZnO films on AIEO3 （0001） substrates by the technique of helicon-wave-plasma assisted sputtering deposition was reported. Hall effect measurements showed that the undoped ZnO films undergoes the change from n-type to p-type and then again to n-type when the working pressure was changed. The carrier concentration and resistivity of the intrinsic films could reach to 1.30×10^16cm^-3 and 99.68Ω.cm, the Hall mobility was 4 cm^2.V^-1.s^-1.. The results of X-ray diffraction and atom force microscope showed that the conduction type of the films was associated with their growth characteristics. The reduction of the ability which the active particles carry energy to film surface would lead to the increase of nucleation probability and the reduction of ZnO crystal grain. A high concentration of active oxygen particles was in favor of the growth of intrinsic p-type ZnO films, while the change of the type of oxygen particles influenced the quality of the films, enhancing their donor defect growth and making reversed their conduction type.

关 键 词：p-ZnO 螺旋波等离子体 自然掺杂 应力 

分 类 号：O484[理学—固体物理]