退火处理对ITO和ITO：Zr薄膜性能的影响  

Effect of annealing treatment on properties of ITO and ITO:Zr thin films

作　　者：张波[1] 董显平[1] 徐晓峰[2] 赵培[3] 吴建生[1] 

机构地区：[1]上海交通大学材料科学与工程学院教育部高温材料及测试重点实验室,上海200240 [2]东华大学理学院,上海200051 [3]中国科学院上海技术物理研究所,上海200083

出　　处：《中国有色金属学报》2008年第1期48-53,共6页The Chinese Journal of Nonferrous Metals

基　　金：上海应用材料基金(0525)

摘　　要：利用磁控溅射在室温条件下沉积ITO薄膜和ITO:Zr薄膜,对比研究在空气中退火处理对ITO和ITO:Zr薄膜性能的影响。结果表明,Zr的掺杂促进了(400)晶面的取向,随着退火温度的升高,薄膜表面颗粒增大,表面粗糙度有所降低。室温下Zr的掺杂显著改善了薄膜的光电性能,随着退火温度的升高,ITO和ITO:Zr薄膜的方阻都表现为先降后升的趋势,ITO:Zr薄膜在较低的退火温度下可见光透过率就可达到80%以上,直接跃迁模型确定的光学禁带宽度Eg呈现了先升后降的变化。ITO:Zr薄膜比ITO薄膜显示了更高的效益指数,揭示了ITO:Zr薄膜具有更好的光电性能。ITO and ITO：Zr thin films were deposited at room temperature by magnetron sputtering. Properties of ITO and ITO：Zr thin films by air-annealing treatment were contrastively studied. The results show that Zr-doping promotes the orientation of （400） plane. With the increase of annealing temperature, the grain size increases and the surface roughness decreases. Zr-doping remarkably improves the optical-electronic characteristics of the films deposited at room temperature. With the increase of annealing temperature, the sheet resistances of ITO and ITO：Zr thin films show the trend that first drops and then rises. ITO：Zr thin films have high optical transmittance of above 80% at lower annealing temperature. The direct transition model was established and band gap energy Eg was obtained, which show the change that Eg increases and follows by a sudden drop. ITO：Zr thin films reveal higher figure of merit than ITO thin films, which reveals that ITO：Zr thin films have better optical-electrical properties.

关 键 词：ITO薄膜 磁控溅射 退火处理 光电性能 

分 类 号：O484.4[理学—固体物理]