全集成低相位噪声LC压控振荡器设计  

2.4GHz Monolithically Integrated Low Phase Noise LC Voltage Controlled Oscillator

作　　者：刘颖异[1] 王志功[1] 钱照华[1] 

机构地区：[1]东南大学射频集成电路与系统教育部工程研究中心,江苏南京210096

出　　处：《中国集成电路》2008年第3期45-48,52,共5页China lntegrated Circuit

摘　　要：提出了一种应用于ISM频段的低相位噪声LC VCO。电路采用TSMC 0.18μm 1P6M混合信号CMOS工艺进行设计,芯片版图面积740μm×700μm。在电源电压为1.8V时,后仿真结果表明,电路工作频率为2.4GHz时,调谐范围为23%。在偏离中心频率1MHz处,相位噪声为-124.2dBc/Hz。核心部分功耗约为7.56mW。A monolithically integrated low phase noise LC voltage controlled oscillator （ VCO ） in an ISM band is presented. It is designed in TSMC＇ s 0.18μ m mixed-signal 1P6M CMOS process. The layout size is 740 μ m × 700 μm. With a 1.SV supply voltage, the post-simulation gives a phase noise of-124.2dBc/Hz at 1MHz off the carrier of 2.4GHz. The percent tuning range is 23% and the core circuit dissipated a power of about 7.56mW.

关 键 词：压控振荡器 片上电感 Q值 相位噪声 CMOS工艺 

分 类 号：TN752[电子电信—电路与系统] TN752.5