Si能带的非抛物线性对MOSFET电子输运的影响  

Influence of Nonparabolicity Rate in Si Band on Carrier Transport Properties in MOSFET

作　　者：李海霞[1] 毛凌锋[1] 

机构地区：[1]苏州大学电子信息学院,江苏苏州215021

出　　处：《半导体技术》2008年第3期235-238,共4页Semiconductor Technology

基　　金：国家自然科学基金(60606016)

摘　　要：随着器件尺寸的进一步减小,Si能带的非抛物线性以及高电场对MOSFET中沟道电子输运的影响变得越来越重要。在基于全能带蒙特卡罗方法的基础上,研究了非抛物线因子对沟道电子输运的影响。研究表明,非抛物线因子对小尺寸器件输运电流的影响大,而对大尺寸器件输运电流的影响不明显,这意味着对于深亚微米MOSFET必须考虑非抛物线因子对器件电子输运的影响。Nonparabolicity in Si and high field is playing a more and more significant effect on the carrier transport properties in MOSFET as the CMOS technology scales down. The influence of the nonpambolicity in Si on the electron transport properties in MOSFET was calculated by full band Monte Carlo technique. The results show that nonparabolicity in Si has a significant effect on the current transport for the small-scale device whereas it can be neglected for the conventional large-scale devices. It means that, such an influence must be considered for sub-micron MOSFET.

关 键 词：深亚微米金属-氧化物半导体场效应晶体管 非抛物线因子 全能带蒙特卡罗 速度过冲 

分 类 号：TN386.1[电子电信—物理电子学]