包含负阻效应的高压LDMOS子电路模型  

A Subcircuit Model for HVLDMOS Including Negative Differential Resistance

作　　者：谢姝[1] 曹娜[1] 郑国祥[1] 龚大卫 

机构地区：[1]复旦大学材料科学系,上海200433 [2]上海先进半导体制造有限公司,上海200233

出　　处：《复旦学报（自然科学版）》2008年第1期21-25,共5页Journal of Fudan University：Natural Science

摘　　要：高压MOS器件具有复杂和特殊的结构,存在自热效应与沟道长度调制效应.这些效应使饱和区电流会随电压的增加而减小,即存在负阻效应.为有效表征这一特性,使用标准器件建立子电路模型,通过合适的器件选择和参数设置来模拟负阻效应.同时,根据不同沟道区域的饱和原理,采用不同的模型与参数进行模拟,使子电路适用于不同栅压和漏压.子电路具有精确的模拟性能,在电路模拟中,可以作为一个黑匣子直接调用,克服传统BSIM3模型模拟上的不足.Self-heating effect and channel length modulation exist in high voltage MOS devices, due to their special and complex structure. These effects make the saturated current decrease with increasing drain voltage, i. e. showing negative differential resistance. A subcircuit model is established by using standard devices, which simulates the negative differential resistance accurately by choosing appropriate device models and parameters. It can also be applied to different voltage range, if the subcircuit model uses different types of FET models. The subcircuit model can be used conveniently as a black box with good simulation accuracy and leads to better simulation result than BSIM3 models.

关 键 词：器件结构 高压LDMOS 负阻效应 子电路模型 

分 类 号：TN403[电子电信—微电子学与固体电子学]