InGaAsP/InP半导体功率放大激光器耦合效率的研究  

Study on the Coupling of Laser with InGaAsP/InP Semiconductor Power Amplification

作　　者：杨琏[1] 杨晓妍[1] 王征宇[1] 李松柏[1] 王安锋[1] 薄报学[1] 

机构地区：[1]长春理工大学,吉林长春130022

出　　处：《激光与红外》2008年第3期214-215,共2页Laser & Infrared

摘　　要：通过对波长1.3μm InGaAsP/InP的半导体功率放大激光器端面镀SiO减反射膜工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of 1.31μm InGaAsP/InP laser with semiconductor power amplification. The transmissivities of cavity faces have been increased from 69% and 32.6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device, output power of laser and operating lifetime have been improved.

关 键 词：半导体 功率放大 耦合 减反射膜 

分 类 号：TN248.4[电子电信—物理电子学]