基于Pspice的RTD等效模型及其应用电路研究  

Study of RTD′s Equivalent Model and Its Application Circuits by Pspice

作　　者：杨倩[1] 任勇峰[1] 沈三民[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《微纳电子技术》2008年第3期131-135,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助(50405025)

摘　　要：简要介绍了RTD(共振隧穿二极管)的微分负阻特性及其等效电路,通过对实际AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构I-V曲线拟合,得出RTD的Pspice等效电路模型参数。采用Pspice软件建立了RTD的等效电路模型,并对其微分负阻特性进行了仿真,仿真结果与测试结果基本吻合。利用所建立的模型,对RTD的基本应用电路:反相器、非门、与非门和或非门进行了仿真模拟。结果表明,该类电路能够正确实现其逻辑功能。最后,对基于RTD的振荡电路进行了仿真,仿真频率与实际测试频率处于同一数量级。由于实测电路寄生参数如串联电阻、电容等的影响,仿真结果与测试结果稍有出入。The negative differential characteristics and equivalent circuit of RTD （resonant tunneling diode） were presented. By fitting the I-V curve of actual A1As/InxGal-xAs/GaAs double barrier resonant tunneling structures, the parameters of RTD＇s equivalent model was obtained. Using Pspice, the equivalent model was established, and the negative differential characteristics of RTD were simulated. The results show that the simulation results are coincide well with the testing results. With RTD＇s equivalent model, some application circuits, such as inverter, NOT gate, NAND gate and NOR gate were simulated. Simulation results show this logic circuits can achieve their logic function well. The oscillation circuit based on RTD was simulated, and the simulation frequency was at the same order with actual measurement frequency. The influence of actual circuit＇s parasitic parameters, such as the resistance and the capacitor in series, simulation results vary a little with actual results.

关 键 词：共振隧穿二极管 PSPICE 等效模型 应用电路 振荡电路 

分 类 号：TN312.2[电子电信—物理电子学] TN302