负热膨胀ZrW_2O_8薄膜的制备和性能  

Preparation and negative thermal expansion properties of ZrW_2O_8 thin films

作　　者：刘红飞[1] 程晓农[1] 张志萍[1] 付廷波[1] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013

出　　处：《材料研究学报》2008年第1期83-86,共4页Chinese Journal of Materials Research

基　　金：国家自然科学基金项目(50372027;50442023);江苏省高校自然科学重大基础研究项目06KJA43010;江苏大学博士创新基金.

摘　　要：用交替射频磁控溅射法在石英基片上沉积并退火制备了ZrW_2O_8薄膜,测量了薄膜与基片之间的结合力和薄膜厚度,研究了薄膜的负热膨胀特性.结果表明:用磁控溅射方法制备的薄膜为非晶态,表面平滑、呈颗粒状,在1200℃热处理3 min后得到立方相ZrW_2O_8薄膜,结晶薄膜的颗粒长大,薄膜与基片之间有良好的结合力.立方相ZrW_2O_8薄膜在15-200℃热膨胀系数为-24.81×10^(-6)K^(-1),200-700℃热膨胀系数为-4.78×10^(-6)K^(-1),平均热膨胀系数为-10.08×10^(-6)K^(-1).ZrW2O8 thin films were deposited on quartz substrates by alternating RF magnetron sputtering with WO3 and ZrO2 ceramic target and followed by annealing at different temperatures. The phase composition, morphology, thickness and cohesion of the ZrW2O8 thin films were measured, and the negative thermal expansion properties were investigated. The results showed that the as-deposited ZrW2O8 film shows an amorphous phase and its surface is smooth and granular. The cubic ZrW2O8 thin film can be prepared at 1200 ℃ for 3 min in air and the grain size of the film grows bigger. The cohesion between the quartz substrate and the ZrW2O8 thin film is fine. The thermal expansion coefficient of ZrW208 film is -24.8×10^-6K^-1 in the temperature range from 15 ℃ to 200 ℃, and -4.78×10^-6K^-1 from 200 ℃ to 700 ℃, and the average value of the coefficient is -10.08×10^-6K^-1 in the temperature range from 15℃ to 700 ℃.

关 键 词：无机非金属材料 钨酸锆 薄膜 磁控溅射 负热膨胀 

分 类 号：O484[理学—固体物理] TB383[理学—物理]