功率PIN二极管PSpice子电路模型  

A New Power PIN Diode PSpice Subcircuit Model

作　　者：盛定仪[1] 杨耿[1] 谭吉春[1] 杨雨川[1] 

机构地区：[1]国防科技大学理学院,湖南长沙410073

出　　处：《现代电子技术》2008年第6期141-143,共3页Modern Electronics Technique

基　　金：武器装备预研基金项目(51421-KG0152)

摘　　要：提出一种改进的PIN二极管子电路模型。该模型能够反映PIN二极管的瞬态开关特性,将基区电导调制效应考虑在内。通过PSpice软件瞬态仿真PIN二极管的正向直流、反向恢复特性。利用该子电路对新型SiC材料PIN二极管建模仿真,仿真结果表明运用新材料对二极管开关性能有显著提高。An improved PIN diode PSpice subcircuit model is proposed in this paper. The model takes into consideration of the conductivity modulation in the base and is able to accurately simulate switching behavior of PIN diodes. PSpice simulation results of PIN diode are presented,including forward V- A characteristic and reverse recovery. The subcircuit is also used to model a new SiC PIN diode. Simulation results indicate that using SiC PIN diodes can greatly improve the switching performance.

关 键 词：PIN二极管 电路模型PSpice仿真 碳化硅 瞬态开关特性 

分 类 号：TN710[电子电信—电路与系统]