铈掺杂对PZT压电陶瓷性能的影响  

Effect of cerium-modified on the properties of PZT piezoelectric ceramics

作　　者：陈亚波[1] 张洋洋[2] 姜胜林[2] 刘耀平[2] 郭婷[2] 

机构地区：[1]华中科技大学电气与电子工程学院,湖北武汉430074 [2]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《功能材料》2008年第3期379-381,384,共4页Journal of Functional Materials

基　　金：新世纪优秀人才支持计划资助项目(NCET-04-0703);湖北省自然科学基金资助项目(2005ABA298)

摘　　要：研究了铈掺杂对PZT(锆钛酸铅)压电陶瓷材料的相组成、微观结构、介电性能、压电性能及铁电性能的影响,并对实验结果做出物理机理的解释。实验结果表明,适量的铈掺杂有利于材料结构的致密,提高了体电阻率,解决了材料在高温高场下极化困难的问题,在铈掺杂量为0.4%(摩尔分数)时,制备出综合性能良好的PZT压电陶瓷:室温时rε=958,tgδ=0.24%,d33=239pC/N,Kp=0.45,Qm=886,适合制备大功率压电陶瓷。The effect of cerium oxide doping on the phase composition, microcosmic configuration, dielectric properties, piezoelectric properties and ferroelectric properties of PZT piezoelectric ceramics was investigated in details, and the physical mechanism aiming at the results of the experiments was explained. The results show that cerium oxide （CeO2） with proper content can densify the material construction, increase bulk resistivity and settle the problem that the ceramic was hard to be polarized under high temperature and high electrical field. When the amount of cerium oxide doping was 3.0at%, we developed the PZT ceramics with good integrated properties： in room temperature, εr =958 ,tgδ=0.24% ,d33 =239pC/N,Kp=0. 45 ,Qm =886, it has excellent comprehensive properties for application of high-power piezoelectric ceramics.

关 键 词：大功率压电陶瓷 PZT 相结构 低损耗 体电阻率 

分 类 号：TM282[一般工业技术—材料科学与工程]