高功率VCSEL中应变补偿量子阱的理论设计  

Theoretical design method of strain compensated quantum well in high power VCSELs

作　　者：王青[1] 曹玉莲[1] 何国荣[1] 韦欣[1] 渠红伟[1] 宋国峰[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所纳米光电子实验室,北京100083

出　　处：《光电子．激光》2008年第3期304-307,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金重点资助项目(60636030/F0403)

摘　　要：利用模型固体理论、k.p理论和Pikus-Bir理论,研究了InGaAs/GaAsP应变补偿量子阱,得出了较为简单通用的设计方法;进而研究了阱宽、InGaAs中In组分和GaAsP中P组分等参数对跃迁波长的影响。理论计算发现,与InGaAs/GaAs普通量子阱相比,InGaAs/GaAsP应变补偿量子阱能提供更深的载流子阱和更大的增益。按照提出的理论设计方法,研制了含InGaAs/GaAsP应变补偿量子阱的垂直腔面发射激光器(VCSEL),理论计算和实验结果相吻合。By means of mode-solid theory, k. p theory and Pikus-Bir theory, a theoretical design of InGaAs/GaAsP strain compensated quantum well（QW） is described,which is very simple and universal. The relationships between the transition wavelength and the parameters of the well, such as well width,indium fractions in InGaAs, phosphorus fractions in GaAsP, are calculated respectively. Meanwhile, the theory calculation results show that InGaAs/GaAsP strain compensated QW could offer deeper carrier well and higher gain than InGaAs/GaAs conventionally compressively strained QW. According to the design,a vertical cavity surface emitting Iaser（VCSEL） device that contains InGaAs/GaAsP strain compensated QWs is fabricated. It is shown that the theory calculation is in accord with the experimental results.

关 键 词：InGaAs/GaAsP 应变补偿 垂直腔面发射激光器(VCSEL) 

分 类 号：TN248.4[电子电信—物理电子学]