非挥发浮栅存储器用PtAu纳米颗粒单层膜的制备  

Fabrication of PtAu Nanoparticles Monolayer Applicable to Nonvolatile Floating Gate Memory

作　　者：闾锦[1] 陈裕斌[1] 潘力佳[1] 濮林[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系固体微结构物理国家实验室,南京210093

出　　处：《纳米技术与精密工程》2008年第2期81-84,共4页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(9060602160676006)

摘　　要：将Langmuir-Blodgett(LB)膜等化学方法应用于非挥发浮栅存储器制备工艺中.采用反相微乳液方法合成的分散良好的PtAu纳米颗粒粒径约为5 nm,并应用LB膜方法在存储器隧穿氧化层上制备了PtAu纳米颗粒的单层膜.采用SEM对LB膜的表面形貌进行观测,研究了表面压对成膜质量的影响,结果表明在表面压为15 mN/m时可获得密度为1011cm-2均匀分布的PtAu纳米颗粒单层二维阵列,可应用于非挥发性金属纳米颗粒浮栅存储器,并成功拓展了LB膜等化学方法的应用范围.The chemical methods of Langmuir-Blodgett（LB） film and reverse microemulsion were successfully applied in the fabrication process of nonvolatile floating gate memory. Well dispersed PtAu nanoparticles with 5 nm in diameter were synthesized with the method of reverse microemulsion, and PtAu nanoparticles monolayer was fabricated on the tunneling oxide of floating gate memory with the LB film method. The surface morphology of the LB film was characterized by SEM to clarify the effect of the surface pressure on the film. It indicates that the 2D ordered monolayer can be attained with the surface pressure of 15 mN/m, and the density of nanoparticles is 10^11 cm^-2. The ordered monolayer of PtAu nanoparticles is well applicable to the nonvolatile floating gate memory and the application range of LB film method is well developed.

关 键 词：非挥发浮栅存储器 PtAu纳米颗粒 反相微乳液 LB膜 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]