掺Pt的SnO_2薄膜气敏特性研究  

Investigation on Gas Sensing Properties of SnO_2 Thin Films Doped With Pt

作　　者：白振华[1] 潘国峰[2] 孙以材[2] 张效玮[2] 

机构地区：[1]河北工业大学微电子研究所 [2]河北工业大学信息工程学院

出　　处：《传感器世界》2008年第3期14-17,24,共5页Sensor World

摘　　要：用直流磁控溅射法分别在Si(111)基片及陶瓷基片上制备掺有Pt的SnO2薄膜,并进行500℃～700℃退火处理,对掺杂前后的薄膜进行XRD分析,测试各掺杂样品气敏特性。500℃退火后,掺杂样品对各种有机气体有较高的灵敏度,随着溅射时间的延长,气敏特性提高。700℃退火后,45min溅射的样品对氨气有很高的灵敏度和很好的选择性,最佳工作温度为220℃左右。随着掺杂时间延长,气敏特性降低。Thin films SnO2 doped with Pt were prepared by DC magnetron sputtering on Si （lll） wafers and ceramic tubes. Afterwards, annealing was carded out respectively at 500℃ and 700℃. The structure was studied by XRD and the sensing properties were tested , the samples showed higher sensitivitytowards the organic vapor after 500℃ annealing. After 700℃ annealing, the samples with 45 minutes Pt-doping showed excellent selectivity and high sensitivity only towards ammonia vapor . The best operating temperature is 220℃. The sensing properties decreased with the doping time beyond 45 minutes.

关 键 词：Sn02薄膜 磁控溅射 气敏特性 灵敏度 

分 类 号：TB383.2[一般工业技术—材料科学与工程]