六硼化镧场发射阴极阵列的制作及特性(英文)  

Fabrication and field emission characteristics of LaB_6 field-emitter arrays

作　　者：王小菊[1] 蒋亚东[1] 林祖伦[1] 祁康成[1] 陈泽祥[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《强激光与粒子束》2008年第2期304-308,共5页High Power Laser and Particle Beams

摘　　要：采用氧等离子体氧化刻蚀工艺,制备出尖锐的六硼化镧(LaB6)微尖锥场发射阵列。在二极管结构中测试了LaB6-FEAs的场发射性能,得到了真空度为5×10-5Pa下的I-V曲线及相应的Fowler-Nordheim节点。结果表明,由于LaB6材料较低的逸出功,使得阴极的开启电压较小,开启场仅为7 V/μm。此外,将氧等离子体氧化刻蚀方法与氩氧等离子体刻蚀方法和电化学刻蚀方法进行了比较,表明氧等离子体氧化刻蚀方法是制备LaB6场发射阴极阵列的一种理想工艺。Lanthanum hexaboride field-emitter arrays（LaB6 FEAs） with tip structures are fabricated by oxygen plasma oxidation-etching method. The field emission characteristics are studied in a conventional diode test cell in vacuum system. LaB6-FEAs exhibit a much lower turn-on field of 7 V · μm^-1 due to its lower work function of 2.6 eV. The Fower-Nordheim plot obtained from the current-voltage characteristic is found to be nearly linear in accordance with the quantum mechanical tunneling phenomenon. In addition, oxygen plasma oxidation-etching method is also compared with argon-oxygen plasma etching method and electro-chemical etching method, which indicates that oxygen plasma oxidation-etching method is a very promising fabrication technique for the preparation of LaB6-FEAs.

关 键 词：六硼化镧(LaB6) 场发射阵列 氧化 刻蚀方法 

分 类 号：O462[理学—电子物理学]