非晶Er2O3高k栅介质薄膜的制备及结构特性研究  

Structural Characteristics of Amorphous Er_2O_3 Films Grown on Si(001)by Reactive Evaporation

作　　者：方泽波[1] 谭永胜[1] 朱燕艳[2] 陈圣[2] 蒋最敏[2] 

机构地区：[1]绍兴文理学院物电系,绍兴312000 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《无机材料学报》2008年第2期357-360,共4页Journal of Inorganic Materials

基　　金：国家重点基础研究专项基金(G2001CB3095，10321003，60425411);绍兴市科技基金(2007A21015)

摘　　要：采用高真空反应蒸发法在未加热的p型Si(100)衬底上实现了非晶Er_2O_3高k栅介质薄膜的生长.俄歇电子能谱证实薄膜组分符合化学剂量比.X射线衍射、反射式高能电子衍射和高分辨透射电子显微镜测量表明,不但原位沉积的薄膜是非晶结构,而且高真空700℃退火30min后样品仍保持了良好的非晶稳定性.原子力显微镜检测显示高真空退火有利于改善薄膜的表面形貌.退火后,Er_2O_3薄膜获得了平整的表面.电容一电压测试得到薄膜的有效介电常数为12.6,EOT为1.4nm,在1MV/cm时漏电流密度为8×10^(-4)A/cm^2.这些特征表明非晶Er_2O_3薄膜是一种较好的高k栅介质候选材料.High k dielectric Er2O3 were deposited on p-type Si （100） substrates by reactive evaporation using metallic Er source at room temperature in an oxygen atmosphere. The composition of the films is determined to be stoichiometric. X-ray diffraction, reflection high energy electron diffraction and high resolution transmission electron microscopy tests reveal that the films are amorphous even after thermal annealing at 700℃. The films have very flat surface after high temperature annealing. The dielectric constant of Er2O3 films is 12.6, an effective oxide thickness of 1.4nm is achieved, with a low leakage current density of 8×10^-4A/cm^2 at electric field of 1MV/cm after annealing. The obtained results indicate that the amorphous Er2O3 film is a promising candidate for high k gate dielectric in Si microelectronic devices.

关 键 词：高K栅介质 Er2O3薄膜 反应蒸发 

分 类 号：O484[理学—固体物理]