石英衬底上柱状多晶硅薄膜的制备  

Fabrication of Polycrystalline Silicon Films with Columnar Grains Structure on Quartz

作　　者：张丽伟[1] 周伶俐[2] 李瑞[3] 李红菊[1] 卢景霄[1] 

机构地区：[1]郑州大学教育部材料物理重点实验室,郑州450052 [2]新乡学院,新乡453000 [3]河南工业大学,郑州450001

出　　处：《无机材料学报》2008年第2期369-372,共4页Journal of Inorganic Materials

基　　金：国家重点基础研究973计划(2006CB202601)

摘　　要：利用射频等离子体增强化学气相沉积法(RF-PECVD)在已经预沉积有非晶硅薄膜的石英衬底上低温沉积了N/I非晶硅薄膜,对样品进行了两步快速光热(RTP)退火.采用Raman、X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试仪器对样品退火前后的结晶状况和微观形貌进行了分析.结果表明,该N/I非晶硅薄膜退火后的晶化率达到了94%左右,断面形貌为柱状结构,样品中的平均晶粒尺寸约30nm,晶粒团簇的尺寸最大约1.5μm.N/I silicon thin films were deposited on amorphous silicon thin film coated quartz substrate by radio frequency plasma enhanced chemical vapor deposition（RF-PECVD）system at low temperature, and subsequently annealed by two-step rapid thermal processing （RTP）. Through Raman scattering, X-Ray diffraction （XRD）, scanning electron microscope（SEM） and transmittance electron microscope （TEM） measurement, the crystallization and morphologies of the sample were investigated. The results show that the crystallinity of the N/I silicon thin films reaches about 94% after being annealed. The cross sectional morphology of the N/I silicon thin films is of columnar grains and the average grain size of the sample is about 30nm while the biggest grain cluster is about 1.5μm in landscape orientation.

关 键 词：快速光热退火 柱状结晶 多晶硅薄膜 多晶硅薄膜太阳电池 

分 类 号：TN304[电子电信—物理电子学]