耿氏二极管的几种失效模式及其机理分析  

Failure Mode and Mechanism Analysis of Gunn Diode

作　　者：高兆丰[1] 高金环[1] 徐立生[1] 张士芬[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第4期363-365,共3页Semiconductor Technology

摘　　要：介绍了耿氏二极管的工作原理及其基本结构,通过外观检查、电特性测试、环境试验、内部目检、X射线及扫描电镜(SEM)检查等失效分析手段和方法,针对耿氏二极管在使用过程中较常出现的短路、开路及管帽脱落等失效模式及失效机理进行了分析和讨论,并根据上述几种失效模式对应的机理,指出了避免失效的一些措施,对该器件的制造商和使用者具有一定的参考价值。The basic structure and working principle of Gunn diodes were introduced, some failure modes such as short or open circuit, cap fall off were analyzed and discussed through appearance inspection, electricity characteristic test, environment test, interior inspection, X-ray, SEM etc. Some effective measures were given to avoid analogous failure, it provides better reference to the manufacturers and users of the Gunn diode.

关 键 词：耿氏二极管 可靠性 失效模式 失效机理 

分 类 号：TN387.1[电子电信—物理电子学] TN306