异质结双极型晶体管SPICE模型及其参数提取  

SPICE Model and Its Parameter-Extraction for Heterojunction Bipolar Transistor

作　　者：章安良[1] 

机构地区：[1]宁波大学信息学院,浙江宁波315211

出　　处：《电子器件》2008年第2期436-440,共5页Chinese Journal of Electron Devices

摘　　要：将异质结双极型晶体管(HBT)模型分为本征模型和外模型,并综合考虑了异质结双极型晶体管的寄生效应、空间电荷区的复合效应、隧道效应、热效应和重搀杂效应等因数,应用VC++语言编制提取HBT模型参数软件包,根据HBT的物理参数模拟了HBT的I-V特性、差分电路的稳态特性和瞬态特性,并与实验结果相对比,验证了HBT模型的正确性。The model of Heterojunction Bipolar Transistor is composed of intrinsic model and extrinsic model, which is considering of its parasitical effects, recombination effects in space charge regions, tunnel effects,heat effects and heavily doped effects. Parameters of the model of HBT are extracted by using of VC＋＋ and valid of the model is verified by I-V characteristics of HBT, steady-state and transient characteristics of differential amplifier.

关 键 词：异质结双极型晶体管 参数提取 等效电路 

分 类 号：TN322.8[电子电信—物理电子学]