门极换流晶闸管(GCT)击穿机理的研究  

Research on the Breakdown Mechanism of Gate Commutated Thyristor

作　　者：王彩琳[1] 高勇[1] 马丽[1] 刘静[1] 

机构地区：[1]西安理工大学电子工程系,西安710048

出　　处：《电子器件》2008年第2期449-452,共4页Chinese Journal of Electron Devices

基　　金：陕西省自然科学基金资助(2007E208);西安理工大学科研基金资助(105-210610)

摘　　要：简述了门极换流晶闸管(GCT)的耐压结构及其特点。利用MEDICI软件模拟和分析了具有不同结构参数的四种器件的阻断能力和通流能力,研究了GCT的击穿机理。结果表明,GCT的击穿实质上属于场阻止(FS)型击穿,并非穿通(PT)型击穿。从而指出以往对GCT击穿机理的认识存在局限性。The enduring voltage structure and features of Gate Commutated Thyristor （GCT） were analyzed briefly. And the blocking and conducting characteristics of four devices with various structural parameters were simulated and analyzed by MEDICI simulator. The breakdown mechanism of GCT was researched. The result shows that the breakdown of GCT is field stop （FS） breakdown essentially, but not the punch through （PT） breakdown. It is pointed out the perspective for the GCT breakdown mechanism had localization ago.

关 键 词：电力半导体器件 门极换流晶闸管 场阻止层 透明阳极 击穿 

分 类 号：TN34[电子电信—物理电子学] TN342.4