多孔硅的微结构与发光特性研究  

STUDIES ON MICROSTRUCTURE AND PHOTOLUMINESCENCE PROPERTY OF POROUS SILICON

作　　者：刘小兵[1,2,3] 孙洁林 袁帅[1,2,3] 廖良生 何钧[1,2,3] 缪熙月 范洪雷[1,2,3] 徐磊 李民乾 侯晓远[1,2,3] 

机构地区：[1]复旦大学应用表面物理国家重点实验室和李政道物理学综合实验室 [2]长沙电力学院物理系 [3]中国科学院上海原子核研究所核分析中心

出　　处：《物理学报》1997年第8期1543-1551,共9页Acta Physica Sinica

基　　金：国家自然科学基金;国家教育委员会跨世纪人才基金

摘　　要：利用原子力显微镜（ＡＦＭ）和光致荧光（ＰＬ）光谱对一系列直流腐蚀和脉冲腐蚀的多孔硅的微结构及发光特性进行了对比研究．表面和侧面的ＡＦＭ结果表明，多孔硅表面呈“小山”状，有许多小的、突出的硅颗粒．在相同的腐蚀条件（等效）下，脉冲腐蚀的样品表面Ｓｉ颗粒更加尖锐、突出，侧面的线状结构更明显，多孔硅层更厚．对应的ＰＬ谱，脉冲腐蚀的样品发光更强．AFM and PL are adopted to study the morphological and photoluminescent characteristics of a series of porous silicon (PS) samples etched with direct current and pulsed current.The results of AFM indicate that there are many “hillocks” at the surface of PS samples and the microstructure of PS samples is quite different with different etching modes.The amount of the small Si particles formed by pulsed etching is more than that by direct current etching under the equivalent etching conditions and the particles appear more protruding and sharper by the pulsed etching.Moreover,PL spectra shows that it is easier to get photoluminescent PS samples with higher intensity by using pulsed etching method.The microstructure of PS samples plays a very important role in the generation of photoluminescence of porous silicon.

关 键 词：PL光谱 多孔硅 微结构 发光特性 AFM 

分 类 号：TN204[电子电信—物理电子学]