镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究  

GREEN/BLUE LIGHT EMISSION AND LUMINESCENT MECHANISM OF NANOCRYSTALLINE SILICON EMBEDDED IN SILICON OXIDE THIN FILM

作　　者：朱美芳[1] 陈国 许怀哲[1] 韩一琴[1] 谢侃[2] 刘振祥[2] 唐勇 陈培毅[3] 

机构地区：[1]中国科学技术大学研究生院物理部半导体超晶格国家重点实验室 [2]中国科学院物理研究所 [3]清华大学微电子学研究所

出　　处：《物理学报》1997年第8期1645-1651,共7页Acta Physica Sinica

基　　金：中国科学技术大学研究生院院长基金

摘　　要：采用对非晶氧化硅薄膜退火处理方法，获得纳米晶硅与氧化硅的镶嵌结构．室温下观察到峰位为２４０ｅＶ光致发光．系统地研究了不同退火温度对薄膜的Ｒａｍａｎ谱、光荧光谱及光电子谱的影响．结果表明，荧光谱可分成两个不随温度变化的峰位为１８６和２３０ｅＶ的发光带．Ｓｉ２ｐ能级光电子谱表明与发光强度一样Ｓｉ４＋强度随退火温度增加而增加．Ｓｉ平均晶粒大小为４１—８０ｎｍ，不能用量子限制模型解释蓝绿光的发射．Green/blue light emission with peak position around 2.3—2.4eV at room temperature was observed from Si nanocrystals embedded in silicon oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2.38eV, which were independent of annealing temperature T a. Silicon and SiO 2 phases were separated in the annealing temperature range. Both PL intensity and the amount of Si 4+ increased repidly as T a>750℃. From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiO x network.

关 键 词：荧光谱 可见光 氧化硅 薄膜 纳米晶硅 发光性 

分 类 号：O484.41[理学—固体物理]