烧结工艺对PMS-PNN-PZT压电厚膜性能的影响  

Effects of Sintering Process on Properties of PMS-PNN-PZT Piezoelectric Thick Film Material

作　　者：沈建兴[1] 李传山[1] 张雷[1] 董金美[1] 武红霞[1] 

机构地区：[1]山东轻工业学院材料科学与工程学院,山东济南250353

出　　处：《压电与声光》2008年第2期193-195,共3页Piezoelectrics & Acoustooptics

基　　金：济南市科学技术发展计划基金资助项目(046039)

摘　　要：采用丝网印刷法制备了PMS-PNN-PZT四元系压电厚膜陶瓷材料。研究了压电厚膜的烧结温度、烧结气氛对其压电、介电等性能及微观结构的影响。用XRD和SEM分析材料的相组成、厚膜定位及显微结构,结果表明,在密封埋粉的PbO气氛中,烧结温度1060℃,保温时间2 h,制得一种性能良好的压电厚膜陶瓷材料。其中,该压电厚膜压电常数d33为240 pC/N,相对介电常数rε为1 112,机械品质因数Qm为1250,机电耦合系数kp为0.52。PMS-PNN-PZT piezoelectric thick film ceramic material was prepared by the screen printing method. Effects of sintering temperature and sintering atmosphere on piezoelectric and dielectric properties and microcosmic structure of piezoelectric thick film was studied. Phases, thick film orientation and microcosmic structure were analysed by XRD and SEM. The results show that piezoelectric thick film ceramic material with excellent performance has been prepared at sintering temperature of 1 060 ℃ for 2 h in PbO atmosphere. Piezoelectric constant d33 of 240 pC/N, comparative dielectric constant εr of 1 112, mechanical quality factor Qm of 1 250 and electromechanical coupling coefficient kp of 0.52 have been obtained.

关 键 词：PMS-PNN—PZT 压电厚膜 烧结温度 烧结气氛 扩散 

分 类 号：TM282[一般工业技术—材料科学与工程]