石墨电极制备多孔硅的蓝光发射研究  

Study on Blue Light Emission of Porous Silicon with Graphite as Electrode

作　　者：吴现成[1] 闫大为[1] 徐大印[1] 甄聪棉[2] 

机构地区：[1]烟台大学光电信息科学技术学院,山东烟台264005 [2]河北师范大学物理系,河北石家庄050000

出　　处：《烟台大学学报（自然科学与工程版）》2008年第2期91-93,共3页Journal of Yantai University(Natural Science and Engineering Edition)

基　　金：河北省教育厅基金资助项目(2006123)

摘　　要：采用自制的双电解槽、高纯石墨电极,在一定浓度的氢氟酸乙醇溶液中阳极氧化腐蚀硅片制备一定孔隙度的多孔硅.利用荧光分析仪(激发波长250 nm)分析了样品的光学特性,在470 nm处观测到明显的蓝光发射峰.改变阳极腐蚀电流密度和腐蚀时间,研究腐蚀参数对光学特性的影响,结果表明:改变阳极电流密度和腐蚀时间不能引起470 nm处峰位的蓝移或者红移;随着电流密度的增强,波长470 nm峰值和半宽积分值先增大后减小;延长腐蚀时间,峰值和半宽积分值不断变大.同时,对实验现象进行了初步的理论解释.Porous silicon （PS） with certain porosity is prepared by anodic etching Si （100） wafer in double cell with high purity graphite as anode in HF/ Ethanol solution. The optical properties of as-prepared PS by photoluminescence with EX = 250 nm is studied, and strong visual blue light could be observed at 470 nm. The effects of current density and corruption time on the optical properties are investigated. The results indicate that, the position of blue light peak is always at 470 nm no matter current density or corruption time changes. The peak intensity and half band integral increase first and then decrease as the current density increases, and increase as the corruption time prolongs. Meanwhile, theoretical explanations are given for these phenomena.

关 键 词：多孔硅 石墨电极 光致发光 

分 类 号：O471.1[理学—半导体物理]