Studies on GaN-based laser devices make progress  

出　　处：《Bulletin of the Chinese Academy of Sciences》2008年第1期8-9,共2页中国科学院院刊（英文版）

摘　　要：Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS)has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development.The research results were spoken highly at a panel meeting of experts held on 26 November,2007 in Beijing.Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors （ISCAS） has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development. The research results were spoken highly at a panel meeting of experts held on 26 November, 2007 in Beijing.

关 键 词：中国科学院 研究成果 GAN基激光器 半导体 

分 类 号：TN249[电子电信—物理电子学]