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作 者:王毕艺[1] 蒋晓东[1] 袁晓东[1] 祖小涛[2] 赵松楠[1] 郭袁俊[2] 徐世珍[2] 吕海兵[1] 田东斌[1]
机构地区:[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900 [2]电子科技大学物理电子学院,四川成都610054
出 处:《中国激光》2008年第3期440-444,共5页Chinese Journal of Lasers
基 金:国家863计划(2006AA804803)资助项目
摘 要:用溶胶-凝胶技术,采用提拉镀膜法在K9玻璃基片上镀制了ZrO2/SiO2双层膜和SiO2/ZrO2双层膜,研究了这两种膜层之间的渗透问题。用X射线光电子能谱仪(XPS)测量了薄膜的成分随深度方向的变化,用反射式椭偏仪对X射线光电子能谱仪测得的实验结果进行模拟与验证。结果表明,用X射线光电子能谱仪测得的实验结果建立的椭偏模型,模拟出来的椭偏曲线和用椭偏仪测量出来的椭偏曲线十分吻合;对于ZrO2/SiO2双层薄膜,膜层间的渗透情况不是很严重,在薄膜界面处薄膜的成分比变化非常明显,到达一定深度后薄膜的成分不再随深度的变化而变化;SiO2/ZrO2双层膜膜层界面间的渗透十分严重,渗透层的深度比较大,底层几乎发生了完全渗透。The two-layer ZrO2/SiO2 and SiO2/ZrO2 thin films were deposited on K9 glass by sol gel dip coating method, and the infiltrating between this two types of films was explored. X-ray photoelectron spectroscopy (XPS) was used to measure the variation of composition in different thickness of film, and ellipometry was used to fit the experimental result of the XPS. According to the experimental results of the XPS, the ellipsometric model was coustructed. The results showed that the ellipsometric curve of simulated results accorded with that measured by ellipsometry very well. The infiltrating between the two layer ZrO2/SiO2 film was not serious and the variation of film composition in interface was very obvious; at a given thickness, the film's composition no longer changed; On the contrary , the infiltrating between two layer SiO2/ZrO2 film was very serious and infiltrative layer is very thick, and the complete infiltrating almost happened in the bottom layer.
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