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机构地区:[1]北京理工大学信息科学技术学院光电工程系,北京100081
出 处:《光学学报》2008年第1期151-158,共8页Acta Optica Sinica
基 金:教育部光通信和光波技术重点实验室(北京邮电大学)开放基金资助课题
摘 要:建立了可研究强超短光脉冲放大特性且包含自由载流子吸收、受激辐射、双光子吸收、光谱烧孔和超快非线性折射效应的半导体光放大器理论模型,用以建立脉冲四波混频模型,并进一步仿真了基于半导体光放大器的光采样过程,重点讨论了自由载流子吸收、双光子吸收效应对采样特性的影响。仿真结果与实验结果相符。A new theoretical model is presented to investigate the amplification of strong ultrashort optical pulses in semiconductor optical amplifiers, while taking free-carrier absorption, stimulated emission, two-photon absorption, spectral hole burning and ultrafast nonlinear refraction into account. Based on this model, the pulsed four-wave mixing model is developed to further simulate the optical sampling based on four-wave mixing theory in semiconductor optical amplifiers. The influences of free-carrier absorption and two-photon absorption on sampling characteristics are emphasized. The simulation results are in agreement with reported experimental results.
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