低偏置电流下大功率半导体激光器低频电噪声特性  

The characteristic of low-frequency electrical noise in high-power semiconductor laser diodes at low bias currents

作　　者：郜峰利[1] 郭树旭[1] 曹军胜[1] 张爽[1] 于思瑶[1] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《光电子．激光》2008年第4期449-452,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60471009);吉林省重大科技发展计划资助项目(200403001-4)

摘　　要：测量了大功率InGaAsP/GaAs量子阱半导体激光器在五十分之一阈值电流下的电压低频噪声功率谱密度。实验结果显示,激光器的低频电噪声呈现1/f噪声,在不同的偏置电流范围内,1/f噪声幅度随电流的变化关系不同,整体上随偏置电流的增大而减小,实验中并未发现g-r噪声。结合低偏置电流时激光器动态电阻的大小,给出了1/f噪声的模型,分析了在低偏置电流下的1/f噪声主要来自有源区和漏电电阻,其幅度的大小及其随偏置电流的变化趋势与激光器的可靠性有密切的关系。The voltage low-frequency noise power spectral density in high-power InGaAsP/GaAs quanta well semiconductor laser diodes （QW-LDs） was measured below one-fiftieth threshold current. The experimental results show that,the lowfrequency electrical noise in LDs is 1/f noise,whose magnitude decreases with the increasing of bias currents on the whole,and gr noise is not in existence. According to the value of dynamic resistance of LDs at low bias current,the 1/f noise model at low bias current is deduced. Based on the model,it is analyzed that 1/f noise at low bias current mainly arises from the active region and the creepage resistance,and moreover,the magnitude and the variety trend of 1/f noise magnitude with the bias current are nearly correlative with the reliability of LDs.

关 键 词：半导体激光器 1/f噪声 G-R噪声 可靠性 动态电阻 

分 类 号：TN248[电子电信—物理电子学]