两种不同方法制备的硅纳米颗粒的特性研究  

Fabrication of Si nanoparticles and the optical properties

作　　者：赵美红[1] 方炎[1] 

机构地区：[1]首都师范大学物理系北京市纳米光电子学重点实验室,北京100037

出　　处：《光电子．激光》2008年第4期486-489,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(20275024)

摘　　要：采用激光烧蚀法和电化学腐蚀法制备硅纳米颗粒,两种方法制备的硅纳米颗粒粒径与形貌都不同,而且紫外-可见吸收谱也有很大差别。分析紫外-可见吸收谱发现,硅纳米颗粒与单晶硅相比发生了能带展宽、吸收边蓝移现象,并且有直接能隙的特点;两种方法制备的硅纳米颗粒的光致发光都与硅颗粒的粒径分布和表面层成分密切相关,并且光致发光谱还随激发波长的变化而规律地改变。用量子限制和表面层成分结合模型分析解释了这些现象。Si nanoparticles were prepared using laser ablation and electrochemical etching methods, Whose size, shape and spectroscopic properties are different from each other, especially the optical absorption band of Si nanoparticles that is widened and with a blue shift compared with the crystal silicon and shows approximately direct gap characteristic;photoluminescence （PL） spectrum of both Si nanoparticlcs shows there is a close relation between their particle size and surface component. At the same time,their PL spectra changes gradually with the change of excitation wavelength. These typical phenomena were analyzed with quantum confinement effect and surface states model.

关 键 词：硅纳米颗粒 激光烧蚀 电化学腐蚀 光致发光 

分 类 号：O472[理学—半导体物理]