单电子晶体管的蒙特卡罗模拟及宏观建模(英文)  

Monte Carlo Simulation and Macro-Model of Single-Electron Transistor

作　　者：孙海定[1] 江建军[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《微纳电子技术》2008年第4期198-204,共7页Micronanoelectronic Technology

摘　　要：以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。微观模拟与宏观建模相结合,着重介绍了如何用蒙特卡罗方法和Matlab相结合对上述各种物理现象进行数值模拟,同时对单电子晶体管进行宏观电路等效,用一些常用元器件进行宏观建模。采用强大的模拟集成电路软件Hspice进行分析模拟,大大减少了计算及仿真时间。通过分析比较,两者曲线得到了较好的吻合,直观地反映了单电子晶体管的电学特性,为进一步研究复杂系统提供了理论依据。The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor （SET） as the research object. Combined with the micro-simulation and macro-model, how to use the Monte Carlo method together with Matlab to do the simulations of these physical phenomena were introduced. Meanwhile a SET could be treated as a equivalent macro-model circuit using classical electronic elements which could be analyzed and simulated by Hspice, a formidable software for simulating of large scale integrated circuits, thus saving magnitudes of calculating time. Through analyzing and comparing the curves derived from different methods, the results visually reflect the electrical characteristics of SET, which provide a theoretical basis for studying complex system.

关 键 词：单电子晶体管 单电子隧穿 库仑阻塞 库仑台阶 蒙特卡罗 HSPICE 

分 类 号：TN32[电子电信—物理电子学] TN302