氮团簇离子注入单晶硅的光致发光谱研究  

Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions

作　　者：缪竞威[1] 王培禄[1] 朱洲森[2] 袁学东[1] 王虎[1] 杨朝文[1] 师勉恭[1] 缪蕾[1] 孙威立[2] 张静[1] 廖雪花[2] 

机构地区：[1]四川大学原子核科学技术研究所辐射物理及技术教育部重点实验室,成都610064 [2]四川师范大学物理与电子工程学院,成都610066

出　　处：《物理学报》2008年第4期2174-2178,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10574095,10675087,10535030)资助的课题~~

摘　　要：氮团簇离子N1+0注入单晶硅直接诱发其表层转化为纳米晶结构,导致光学性质发生显著变化.在250—320nm波段的紫外光激励下,在330—500nm光区出现明显的光发射带,并在360nm附近产生强度极高、单色性良好的发射峰,其强度达到N+注入试样或基底的5倍,是N2+注入试样的1.5倍.在可见光区的730nm附近和近红外区的830nm附近也出现发光带.所有上述发光都非常稳定,可长时间保持其发光效率不变.这表明注入层已形成一种品质优良的光致发光材料.The structure of surface layer of monocrystalline Si by implanting nitrogen cluster ions N10^＋ was transformed directly the nanocrystalline, which led to the change in optical properties of monocrystalline Si. Excited by the ultraviolet light of 250-320 nm, the sample showed a clear luminescence band of 330-500 nm and an extra intensive spectral peak with good monochromaticity around 360 nm. The intensity of the peak were 5 times high as the intensity of the substrate or N^＋ implantation samples and 1.5 times high at the N2^＋ implantation samples, respectively. It was also found there were two other stable luminescence hands around 730 nm in the visible region and around 830 nm in the infrared region, respectively. The preliminary study indicated that an excellent photoluminescence material was formed in the implanted layer.

关 键 词：光致发光 团簇离子注入 硅单晶 纳米晶结构 

分 类 号：TN304.12[电子电信—物理电子学]