A Novel Equivalent Circuit Model of GaAs PIN Diodes  

GaAs PIN二极管的新等效电路模型(英文)

作　　者：吴茹菲[1] 张海英[1] 尹军舰[1] 李潇[2] 刘会东[1] 刘训春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]四川大学,成都610064

出　　处：《Journal of Semiconductors》2008年第4期672-676,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:10002909);国家重点基础研究发展规划(批准号:G2002CB311901)资助项目~~

摘　　要：A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts： the p^＋ n^- junction, the i-layer, and the n^- n^＋ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model＇s accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model,fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.基于物理原理的分析,提出了GaAs PIN二极管的一种新等效电路模型.GaAs PIN二极管被分成p+n-结、基区和n-n+结三部分分别建模,总的模型由三个子模型组成,从而极大地提高了模型的准确性.相应的模型参数提取过程不要求苛刻的实验或测试条件,简便易操作.研制了15组GaAs PIN二极管来验证模型,测试结果表明模型准确地反映了GaAs PIN二极管的正向和反向特性.

关 键 词：OaAs PIN diodes MODEL parameter extraction 

分 类 号：TN31[电子电信—物理电子学]