非晶态碲镉汞薄膜的射频磁控溅射生长及其结构和光学特性  

Structural and Optical Properties of Amorphous MCT Films Deposited by RF Magnetron Sputtering

作　　者：孔金丞[1] 孔令德[1] 赵俊[1] 张朋举[1] 李竑志[1] 李雄军[1] 王善力[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,昆明650023

出　　处：《Journal of Semiconductors》2008年第4期733-736,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60576069)~~

摘　　要：在玻璃衬底上用射频磁控溅射技术进行了非晶态碲镉汞（a-HgCdTe,a-MCT）薄膜的低温生长.采用X射线衍射（XRD）和原子力显微（AFM）技术对所生长的薄膜进行分析研究,所生长的非晶态HgCdTe薄膜表面平整,没有晶粒出现,获得了射频磁控溅射生长非晶态HgCdTe薄膜的“生长窗口”.采用傅里叶红外透射光谱分析技术对非晶态HgCdTe薄膜进行了光学性能研究,在1.0-2.0μm范围内研究了薄膜的透射谱线,获得了薄膜的吸收系数（-8×104cm^-1）,研究了其光学带隙（约0.83eV）和吸收边附近的3个吸收区域.Amorphous HgCdTe（a-HgCdTe or a-MCT） films on glass substrate were deposited by RF magnetron sputtering technology. The amorphous structure of the MCT films were studied by XRD and AFM technology and the ＂growth window＂ of a-MCT was obtained. FTIR technology was used to study the optical properties of amorphous MCT films and the absorption coefficient of amorphous MCT films （-8 × 10^4cm^-1） was obtained. We also observed three absorption regions near the optical gap of amorphous MCT. The optical gap of our a-MCT film is about 0.83eV.

关 键 词：非晶态碲镉汞 射频磁控溅射 光学带隙 

分 类 号：TN304[电子电信—物理电子学]